IMT17
Transistors
General purpose transistor
(isolated dual transistors)
IMT17
Applications
General purpose small signal amplifier
External dimensions
(Unit : mm)
1.9
±
0.2
2.9
±
0.2
1.1
+0.2
−0.1
0.8
±
0.1
(6)
(4)
(5)
(6)
0.95 0.95
Features
1) Two 2SA1036K chips in an SMT package.
2) Same size as SMT3 package, so same mounting
machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
4) High collector current. I
C
=
−500mA
5) Mounting cost, and area, are reduced by one half.
(4)
(5)
+
0.2
1.6
−
0.1
2.8
±
0.2
0 to 0.1
Tr
1
Tr
2
(3)
0.3 to 0.6
(2) (1)
+0.1
0.3
−0.05
+0.1
0.15
−0.06
(3)
(2)
(1)
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: T17
Structure
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr
1
and Tr
2
.
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
−60
−50
−5
−500
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Packaging specifications
Packaging type
Code
Part No.
IMT17
Basic ordering unit (pieces)
Taping
T110
3000
∗
∗
200mW per element must not be exceeded.
Electrical characteristics(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
200
7
Max.
−
−
−
−0.1
−0.1
−0.6
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
= −100µA
I
C
= −1mA
I
E
= −100µA
V=
−30V
V=
−4V
I
C
/I
B
= −500mA/ −50mA
V
CE
= −3V,
I
C
= −100mA
V
CE
= −5V,
I
E
=
20mA, f= 100MHz
V
CB
= −10V,
I
E
=
0A, f= 1MHz
Conditions
∗
∗
Measured using pulse current.
Rev.A
1/2
ROHM [ ROHM ]
