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MMST3906 参数 Datasheet PDF下载

MMST3906图片预览
型号: MMST3906
PDF下载: 下载PDF文件 查看货源
内容描述: PNP通用晶体管 [PNP General Purpose Transistor]
分类和应用: 晶体小信号双极晶体管光电二极管
文件页数/大小: 5 页 / 122 K
品牌: ROHM [ ROHM ]
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UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
Features
1) BV
CEO
>
−40V
(I
C
=
−1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
Dimensions
(Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Package, marking, and packaging specifications
Type
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT3906
UMT3
R2A
T106
3000
SST3906 MMST3906
SST3
R2A
T116
3000
SMT3
R2A
T146
3000
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
SST3906
MMST3906
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
UMT3906
SST3906,MMST3906
SST3906,MMST3906
Junction temperature
Storage temperature
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
O
Pd
Limits
−40
−40
−5
−0.2
6.2
0.35
150
−55
to
+150
Unit
V
V
V
A
W
W
°C
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
°C
When mounted on a 7
5 0.6mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Min.
−40
−40
−5
−0.65
60
80
DC current transfer ratio
h
FE
100
60
30
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
250
Typ.
Max.
−50
−50
−0.25
−0.4
−0.85
−0.95
300
4.5
10
35
35
225
75
MHz
pF
pF
ns
ns
ns
ns
Unit
V
V
V
nA
nA
V
V
I
C
=
−10µA
I
C
=
−1mA
I
E
=
−10µA
V
CB
=
−30V
V
EB
=
−3V
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
V
CE
=
−1V,
I
C
=
−0.1mA
V
CE
=
−1V,
I
C
=
−1mA
V
CE
=
−1V,
I
C
=
−10mA
V
CE
=
−1V,
I
C
=
−50mA
V
CE
=
−1V,
I
C
=
−100mA
V
CE
=
−20V,
I
E
=10mA, f=100MHz
V
CB
=
−10V,
f=100kHz, I
E
=0A
V
CB
=
−0.5V,
f=100kHz, I
C
=0A
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
Conditions
+
+
Rev.B
1/4