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MPSA56 参数 Datasheet PDF下载

MPSA56图片预览
型号: MPSA56
PDF下载: 下载PDF文件 查看货源
内容描述: PNP通用晶体管 [PNP General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 67 K
品牌: ROHM [ ROHM ]
 浏览型号MPSA56的Datasheet PDF文件第2页  
SSTA56 / MMSTA56 / MPSA56
Transistors
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features
1) BV
CEO
< −40V
(I
C
=
−1mA)
2) Complements the SSTA06 / MMSTA06 / MPSA06.
!External
dimensions
(Units : mm)
SSTA56
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
0.95 +0.2
−0.1
0.45±0.1
0.2
1.3
+
0.1
2.4
±
0.2
!Package,
marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
MPSA56
TO-92
-
T93
3000
(3)
0~0.1
0.2Min.
0.4 +0.1
−0.05
+0.1
0.15
−0.06
ROHM : SST3
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
MMSTA56
2.9±0.2
1.9±0.2
0.95 0.95
1.1 +0.2
−0.1
0.8±0.1
0.2
1.6
+
0.1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power SSTA56, MMSTA56
dissipation
MPSA56
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−80
−80
−4
−0.5
0.2
0.625
150
−55~+150
Unit
V
V
V
A
W
°C
°C
4.8±0.2
(3)
2.8
±
0.2
!Absolute
maximum ratings
(Ta = 25°C)
(1)
(2)
0~0.1
ROHM : SMT3
EIAJ : SC-59
+0.1
0.15
−0.06
0.4 +0.1
−0.05
All terminals have same dimensions
0.3
~
0.6
2.3
(1) Emitter
(2) Base
(3) Collector
MPSA56
4.8
±
0.2
3.7±0.2
(12.7Min.)
(1)
(2)
5
(3)
0.3
2.5
+
0.1
0.45
±0.1
2.5Min.
0.5±0.1
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
V
CE(sat)
V
BE(on)
h
FE
f
T
Min.
−4
−80
-
-
-
-
100
100
50
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
−0.1
−1
−0.25
−1.2
-
-
-
Unit
V
V
µA
V
V
-
MHz
I
C
=
−100µA
I
C
=
−1mA
V
CB
=
−80V
V
CE
=
−60V
I
C
/I
B
=
−100mA/−10mA
V
CE
/I
B
=
−1V/−100mA
V
CE
=
−1V
, I
C
=
−10mA
V
CE
=
−1V
, I
C
=
−100mA
V
CE
=
−1V
, I
E
= 100mA , f = 100MHz
Conditions