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PN2222A 参数 Datasheet PDF下载

PN2222A图片预览
型号: PN2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN中等功率晶体管(开关) [NPN Medium Power Transistor (Switching)]
分类和应用: 晶体开关晶体管
文件页数/大小: 3 页 / 82 K
品牌: ROHM [ ROHM ]
 浏览型号PN2222A的Datasheet PDF文件第2页浏览型号PN2222A的Datasheet PDF文件第3页  
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!Features
1) BV
CEO
>
40V (I
C
=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!External
dimensions
(Units : mm)
UMT2222A
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0
0.1
(3)
ROHM : UMT3
EIAJ : SC-70
0.3
+
0.1
0.15±0.05
−0
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
(1) Emitter
(2) Base
(3) Collector
!Package,
marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
3000
SST2222A MMST2222A
SST3
R1P
T116
3000
SMT3
R1P
T146
3000
PN2222A
TO-92
T93
3000
SST2222A
0.95
+
0.2
−0.1
0.45±0.1
2.4
±
0.2
1.3
+
0.2
0.1
0
0.1
0.2Min.
0.1
0.4
(3)
0.4
+
0.1
−0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+
0.2
−0.1
0.8±0.1
ROHM : SST3
+
0.1
0.15
−0.06
(1) Emitter
(2) Base
(3) Collector
MMST2222A
!Absolute
maximum ratings
(Ta = 25°C)
(3)
1.6
+
0.2
0.1
2.8
±
0.2
0
0.1
Junction temperature
Storage temperature
When mounted on a 7 x 5 x 0.6 mm ceramic board
Tj
Tstg
0.35
0.625
150
−55 ∼ +150
W
W
°C
°C
(12.7Min.)
UMT2222A,SST2222A,
MMST2222A
Collector power
SST2222A
dissipation
PN2222A
4.8
±
0.2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
I
C
75
40
6
0.6
0.2
V
V
V
A
W
0.4
+
0.1
−0.05
All terminals have same dimensions
+
0.1
0.15
−0.06
PN2222A
4.8
±
0.2
3.7
±
0.2
P
C
2.5Min.
0.5
±
0.1
(1)
(2) (3)
5
+0.3
2.5
0.1
0.3
0.6
Parameter
Symbol
Limits
Unit
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
+0.15
0.45
0.05
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
75
40
6
0.6
35
DC current transfer ratio
h
FE
50
75
50
100
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
40
300
Typ.
Max.
100
100
0.3
1
1.2
2
300
8
25
10
25
225
60
MHz
pF
pF
ns
ns
ns
ns
Unit
V
V
V
nA
nA
V
V
I
C
=10µA
I
C
=10mA
I
E
=10µA
V
CB
=
60V
V
EB
=
3V
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
V
CE
=10V
, I
C
=0.1mA
V
CE
=10V
, I
C
=1mA
V
CE
=10V
, I
C
=10mA
V
CE
=1V
, I
C
=150mA
V
CE
=10V
, I
C
=150mA
V
CE
=10V
, I
C
=500mA
V
CE
=20V
, I
C
=−20mA,
f
=100MHz
V
CB
=10V
, f
=100kHz
V
EB
=0.5V
, f
=100kHz
V
CC
=30V
, V
BE(OFF)
=0.5V
, I
C
=150mA
, I
B1
=15mA
V
CC
=30V
, V
BE(OFF)
=0.5V
, I
C
=150mA
, I
B1
=15mA
V
CC
=30V
, I
C
=150mA
, I
B1
=−I
B2
=15mA
V
CC
=30V
, I
C
=150mA
, I
B1
=−I
B2
=15mA
Conditions