R5007ANJ
Electrical characteristic curves
100
Operation in this
area is limited
by R
DS(ON)
P
W
=100us
P
W
=1ms
DRAIN CURRENT: I
D
(A)
8
6
4
5.0V
2
V
GS
= 4.5V
0
0.1
1
10
100
1000
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE: V
DS
(V)
Fig.2 Typical Output Characteristics(Ⅰ)
0
0
1
2
3
10
7.0V
8.0V
10V
Ta= 25°C
Pulsed
DRAIN CURRENT: I
D
(A)
Data Sheet
5
4
3
2
1
V
GS
= 4.5V
4
5
6.0V
5.0V
Ta= 25°C
Pulsed
8.0V
7.0V
6.5V
5.5V
10V
DRAIN CURRENT : I
D
(A)
10
6.5V
6.0V
5.5V
1
DC operation
0.1
Ta = 25°C
Single Pulse
0.01
DRAIN-SOURCE VOLTAGE : V
DS
( V )
Fig.1 Maximum Safe Operating Area
DRAIN-SOURCE VOLTAGE: V
DS
(V)
Fig.3 Typical Output Characteristics(Ⅱ)
GATE THRESHOLD VOLTAGE: V
GS(th)
(V)
DRAIN CURRENT : I
D
(A)
10
1
0.1
0.01
V
DS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
5
4
3
2
1
0
-50
V
DS
= 10V
I
D
= 1mA
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
100
6
10
V
GS
= 10V
Pulsed
1
Ta=
Ta=
Ta=
Ta=
0.1
0.1
1
10
125°C
75°C
25°C
-25°C
100
0.001
0.0
1.5
3.0
4.5
6.0
0
50
100
150
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: T
ch
(°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
DRAIN CURRENT : I
D
(A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
3
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
(Ω)
2.5
2
1.5
1
I
D
= 3.5A
0.5
0
0
5
10
15
I
D
= 7.0A
Ta=25°C
Pulsed
3
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
2.5
2
1.5
1
0.5
0
-50
I
D
= 7A
V
GS
= 10V
Pulsed
100
V
DS
= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
I
D
= 3.5A
0.1
0
50
100
150
0.01
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
CHANNEL TEMPERATURE: T
ch
(°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
DRAIN CURRENT : I
D
(A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
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3/5
2009.02 - Rev.A
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