RB051L-40
Diodes
Schottky barrier diode
RB051L-40
Applications
General rectification
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
2.0
2.6±0.2
Features
1) Small power mold type. (PMDS)
2) Low I
R
.
3) High reliability.
2.0
4.5±0.2
1.2±0.3
3
①
1
②
0.1±0.02
0.1
5.0±0.3
1.5±0.2
2.0±0.2
PMDS
Structure
Construction
Silicon epitaxial planar
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.3
5.5±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
20
3
70
125
-40 to +125
5.3±0.1
0.05
9.5±0.1
Unit
V
V
A
A
℃
℃
(*1) Mounted on epoxyboard. 180°Half sine wave
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
1
V
F
2
I
R
1
I
R
2
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
0.35
0.45
1
150
Unit
V
V
mA
µA
Conditions
I
F
=1.0A
I
F
=3.0A
V
R
=20V
V
R
=15V
Rev.B
12±0.2
4.2
1/3
ROHM [ ROHM ]
