RB161M-20
Diodes
Schottky barrier diode
RB161M-20
Applications
General rectification
External dimensions
(Unit : mm)
1.6±0.1
0.1±0.1
0.05
Land size figure
1.2
0.85
2.6±0.1
3.5±0.2
Features
1) Power mold type. (CPD3)
2) Low V
F
3) High reliability
Construction
Silicon epitaxial planar
0.9±0.1
PMDU
Structure
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1
1.5MAX
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
25
20
1
30
125
-40 to +125
Unit
V
V
A
A
℃
℃
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
1
V
F
2
I
R
Min.
-
-
-
Typ.
0.28
0.31
280
Max.
0.32
0.35
700
Unit
V
V
µA
Conditions
I
F
=0.5A
I
F
=1.0A
V
R
=20V
Rev.B
3.05
①
1/3
ROHM [ ROHM ]
