RB161L-40
Diodes
Schottky barrier diode
RB161L-40
Applications
General rectification
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
2.0
2.6±0.2
Features
1) Small power mold type. (PMDS)
2) Low V
F
.
3) High reliability.
2.0
①
②
0.1±0.02
0.1
5.0±0.3
3
3
4.5±0.2
1.2±0.3
PMDS
1.5±0.2
2.0±0.2
Structure
Construction
Silicon epitaxial planar
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
①
②
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.3
5.5±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
（60Hz・1cyc）
Junction temperautre
Storage tempereature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Limits
40
20
1
70
125
-40 to +125
Unit
V
V
A
A
℃
℃
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.40
1
Unit
V
mA
Conditions
I
F
=1.0A
V
R
=20V
5.3±0.1
0.05
9.5±0.1
12±0.2
4.2
Rev.H
1/3
ROHM [ ROHM ]
