RB420D
Diodes
Schottky barrier diode
RB420D
!Applications
Low power rectification
!External
dimensions
(Units : mm)
2.8±0.2
1.6
0.4
+0.1
−0.05
0.15
!Construction
Silicon epitaxial planar
(All leads have the same dimensions)
!Circuit
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!Absolute
maximum ratings
(Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
∗
Junction temperature
Storage temperature
∗
60Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Limits
40
40
0.1
1
125
−40∼+125
Unit
V
V
A
A
˚C
˚C
!Electrical
characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
Symbol
V
F
I
R
C
T
Min.
−
−
−
Typ.
−
−
6.0
Max.
0.45
1
−
Unit
V
µA
pF
I
F
=10mA
V
R
=10V
Conditions
V
R
=10V, f=1MHz
0.3∼0.6
D3B
!Features
1) Small surface mounting type. (SMD3)
2) Low I
R
. (I
R
=50nA Typ.)
3) High reliability
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
−0.1
0.8±0.1
+0.2
−0.1
0~0.1
+0.1
−0.06
ROHM [ ROHM ]
