RB451F
Diodes
Schottky barrier diode
RB451F
!
Applications
Low power rectification
!
External dimensions
(Units : mm)
2.0
±
0.2
1.3
±
0.1
0.9
±
0.1
0.3
0.6
0.3
±
0.1
0.15
±
0.05
(All leads have the same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
!
Circuit
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
∗
Junction temperature
Storage temperature
∗
60Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
40
40
0.1
1
125
−40
~
+125
Unit
V
V
A
A
°C
°C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F1
V
F2
I
R
C
T
Min.
−
−
−
−
Typ.
−
−
−
6.0
Max.
0.55
0.34
30
−
Unit
V
V
µA
pF
I
F
=100mA
I
F
=10mA
V
R
=10V
Conditions
V
R
=10V,
f=1MHz
Note) ESD sensitive product handling required.
0.1Min.
3C
!
Features
1) Small surface mounting type. (UMD3)
2) Low V
F
. (V
F
=0.45V Typ. at 100mA)
3) High reliability.
0.65
0.65
1.25
±
0.1
2.1
±
0.1
0
~
0.1
ROHM [ ROHM ]
