RB481Y-90
Data Sheet
100
10000
Ta=75℃
1000
Ta=125℃
100
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
Ta=125℃
10
Ta=25℃
Ta=-25℃
1
Ta=75℃
100
Ta=25℃
10
1
0.1
0.01
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
90
10
0.1
0
100
200
300
400
500
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
0
10
20
30
40
50
60
70
0
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
25
30
580
500
30
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
VR=90V
n=30pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
570
560
550
540
AVE:552.0mV
530
VF DISPERSION MAP
Ta=25℃
IF=0.1A
n=30pcs
450
400
350
300
250
200
150
100
50
0
AVE:29.31uA
29
28
27
26
25
24
23
22
21
20
AVE:21.69pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ct DISPERSION MAP
20
30
10
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
25
20
15
10
AVE:11.7ns
5
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
9
8
7
6
5
4
3
2
1
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
5
AVE:3.70A
0
IFSM DISRESION MAP
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1000
0.2
Rth(j-a)
Per diode
PEAK SURGE
FORWARD CURRENT:IFSM(A)
9
8
7
6
5
4
3
2
1
0
1
10
TIME:t(s)
IFSM-t CHARACTERISTICS
100
Ifsm
t
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
Rth(j-c)
100
D=1/2
0.1 Sin(θ＝180)
DC
Mounted on epoxy board
IM=10mA
IF=100mA
1ms
time
300us
10
0.001
0
0.01
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
0
0.05
0.1
0.15
0.2
0.25
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.3
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2011.05 - Rev.C
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