RB495D
Diodes
Shottky barrier diode
RB495D
Application
General rectification.
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
1.9
2.9±0.2
各リードとも
Each lead has same dimension
同寸法
0.15
-0.06
2.8±0.2
1.6
-0.1
Features
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
0.4
+0.1
-0.05
+0.2
1.0MIN.
(3)
0.95
0�½�0.1
0.3�½�0.6
0.8MIN.
(2)
(1)
0.95
1.9±0.2
0.8±0.1
1.1±0.2
0.01
SMD3
Structure
Silicon epitaxial planar
0.95
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
0
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
3.2±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
0�½�0.5
5.5±0.2
3.2±0.1
1.35±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
25
0.4
2
125
-40 to +125
Unit
V
V
A
A
℃
℃
(*1)Rating of per diode:Io/2
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
V
F
1
V
F
2
I
R
1
Min.
-
-
-
Typ.
-
-
-
Max.
0.30
0.50
70
Unit
V
V
µA
Conditions
I
F
=10mA
I
F
=200mA
V
R
=25V
Rev.B
2.4
+0.1
1/3