RB521S-30
Diodes
Schottky barrier diode
RB521S-30
Applications
Low current rectification and high speed switching
External dimensions
(Units : mm)
CATHODE MARK
Features
1) Extremely small surface mounting type. (EMD2)
2) I
O
=200mA guaranteed despite the size.
3) Low V
F
.( V
F
=0.40V Typ. At 200mA )
1.2±0.05
1.6±0.1
C
0.3±0.05
0.8±0.05
0.6±0.1
0.12±0.05
Construction
Silicon epitaxial planar
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
Absolute maximum ratings
(Ta=25°C)
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current
∗
Junction temperature
Storage temperature
∗
60Hz for 1
Symbol
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
200
1
125
−40~+125
Unit
V
mA
A
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Note) sensitive product handling required.
Symbol
V
F
I
R
Min.
−
−
Typ.
−
−
Max.
0.50
30
Unit
V
µA
I
F
=
200mA
V
R
=
10V
Conditions
ROHM [ ROHM ]
