RB551V-30
Diodes
Schottky barrier diode
RB551V-30
Applications
High frequency rectification
External dimensions
(Unit : mm)
1.25±0.1
0.1±0.1
0.05
Land size figure
(Unit : mm)
0.9MIN.
Features
1) Small mold type. (UMD2)
2) Low V
F
.
3) High reliability.
0.8MIN.
1.7±0.1
2.5±0.2
UMD2
Construction
Silicon epitaxial planar
Structure
0.3±0.05
0.7±0.2
0.1
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings
(Ta = 25°C)
Param eter
R evers e voltage (repetitive peak)
R evers e voltage (DC)
Average rectified forward current
Forward current s urge peak (60Hz
・
1cyc
）
Junction tem perature
S torage tem perature
Sym bol
V
RM
V
R
Io
I
FSM
Tj
Ts tg
Lim its
30
20
500
2
125
-40 to +125
Unit
V
V
mA
A
℃
℃
Electrical characteristics
(Ta = 25°C)
Param eter
Forward voltage
Revers e current
Sym bol
V
F
1
V
F
2
I
R
Min.
-
-
-
Typ.
-
-
-
Max.
0.36
0.47
100
Unit
V
V
µA
I
F
=100m A
I
F
=500m A
V
R
=20V
Conditions
2.75
2.8±0.1
Rev.C
2.1
1/3
ROHM [ ROHM ]
