RB706F-40
Diodes
Shottky barrier diode
RB706F-40
Application
Low current rectification
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
1.3
2.0±0.2
1.25±0.1
2.1±0.1
Features
1) Small mold type. (UMD3)
2) Low V
F
3) High reliability.
(3)
0.9MIN.
各リードとも
Each lead has same dimension
同寸法
0.15±0.05
0.65
0.8MIN
UMD3
0�½�0.1
0.1Min
(2)
(1)
（0.65）
0.7±0.1
0.9±0.1
Structure
Silicon epitaxial planer
（0.65）
Structure
1.3±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
1.75±0.1
3.5±0.05
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
0
4.0±0.1
φ0.5±0.05
0�½�0.1
2.4±0.1
1.25±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
45
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Forward voltage
V
F
Reverse current
I
R
Min.
-
-
-
Typ.
0.26
0.05
2.0
Max.
0.37
1
-
Unit
V
µA
pF
Conditions
I
F
=1mA
V
R
=10V
V
R
=1V , f=1MHz
Capacitance between terminals
Ct
Rev.A
1.6
0.3±0.1
1/3
ROHM [ ROHM ]
