RB715W
Diodes
Shottky barrier diode
RB715W
Application
Low current rectification
Features
1) Ultra small mold type. (EMD3)
2) Low V
F
3) High reliability.
(2)
0.5
0.5
1.0±0.1
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
1.0
0.5 0.5
1.6±0.2
0.3±0.1
0.05
(3)
0.15±0.05
0.7
0.7
0.8±0.1
1.6±0.2
0.7
0�½�0.1
0.1Min
EMD3
0.6
0.6
0.2±0.1
-0.05
(1)
0.55±0.1
0.7±0.1
Construction
Silicon epitaxial planer
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
0
1.75±0.1
0.3±0.1
3.5±0.05
1.8±0.2
5.5±0.2
1.8±0.1
φ0.5±0.1
0�½�0.1
8.0±0.2
0.9±0.2
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1)Rating of per diode
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
I
R
Reverse current
Capacitance between terminals
Ct
Min.
-
-
-
Typ.
-
-
2.0
Max.
0.37
1
-
Unit
V
µA
pF
Conditions
I
F
=1mA
V
R
=10V
V
R
=1.0V f=1.0MHz
Rev.B
1.3
1/3
ROHM [ ROHM ]
