RB715F
Diodes
Shottky barrier diode
RB715F
Application
Low current rectification
Features
1) Small mold type. (UMD3)
2) Low V
F
3) High reliability.
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
1.3
2.0±0.2
0.3±0.1
各リードとも
same dimension
Each lead has
同寸法
(3)
1.25±0.1
2.1±0.1
0.9MIN.
0.65
0.8MIN.
0�½�0.1
0.1Min
(2)
(1)
(0.65)
0.7±0.1
0.9±0.1
UMD3
Construction
Silicon epitaxial planer
(0.65)
Structure
1.3±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
1.75±0.1
3.5±0.05
8.0±0.2
2.4±0.1
5.5±0.2
2.25±0.1
0
4.0±0.1
φ0.5±0.05
0�½�0.1
2.4±0.1
1.25±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1)Rating of per diode
Electrical characteristics
(Ta=25°C)
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
2.0
Max.
0.37
1
-
Unit
V
µA
pF
Conditions
IF=1mA
VR=10V
VR=1V f=1MHz
Rev.B
1.6
0.15±0.05
1/3