RB751S-40
Diodes
Electrical characteristic curves
100
1000
Ta=125℃
Ta=125℃
10
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10 Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
10
1
0.1
0.01
0.001
0
10
20
Ta=75℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
100
Ta=25℃
Ta=-25℃
1
0.01
0
100 200 300 400 500 600 700 800 900 100
0
0.1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VF分布
300
1000
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
280
270
260
AVE:267.4mV
250
Ta=25℃
IF=1mA
n=30pcs
900
800
700
600
500
400
300
200
100
0
AVE:185.5nA
Ta=25℃
VR=30V
n=30pcs
9
8
7
6
5
4
3
2
1
0
Ta=25℃
f=1MHz
VR=1V
n=10pcs
AVE:2.00pF
VF DIPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
20
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
9
8
7
6
5
4
3
2
1
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Ifsm
t
15
10
10
5
AVE:7.30A
0
5
0
1
IFSM DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10000
Mounted on epoxy board
IM=1mA
IF=10mA
0.04
DC
0.003
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
1ms
time
REVERSE POWER
DISSIPATION:P
R
(W)
FORWARD POWER
DISSIPATION:Pf(W)
0.03
D=1/2
Sin(θ＝180)
300us
Rth(j-a)
0.002
DC
0.001
Sin(θ＝180)
D=1/2
0.02
100
Rth(j-c)
0.01
10
0.001
0.00
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.00
0.01
0.02
0.03
0.04
0.05
0
0
10
20
30
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
Rev.B
2/3
ROHM [ ROHM ]
