RDS035L03
Transistors
Switching (30V, 3.5A)
RDS035L03
Features
1) Low Qg.
2) Low on-resistance.
3) Exellent resistance to damage from static electricity.
Application
Switching
Structure
Silicon N-channel
MOS FET
External dimensions
(Units : mm)
Max.1.75
+
5.0
−
0.2
(5)
(4)
(8)
+
3.9
−
0.15
+
6.0
−
0.3
+
0.5
−
0.1
(1)
0.15
+
1.5
−
0.1
ROHM : SOP8
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)
∗
(2)
(3)
∗
∗
Gate Protection Diode.
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
(1)
(2)
(3)
(4)
(5)
(4)
(6)
(7)
(8)
Tr1
Source
Tr1
Gate
Tr2
Source
Tr2
Gate
Tr2
Drain
Tr2
Drain
Tr1
Drain
Tr1
Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
I
DR
I
DRP
∗
I
s
I
sp
∗
P
D
Tch
Tstg
Limits
30
±20
3.5
14
3.5
14
1.3
5.2
2
150
−55∼+
150
Unit
V
V
A
A
A
A
A
A
W
˚C
˚C
Total Power Dissipation(Tc=25˚C)
Channel Temperature
Storage Temperature
∗
Pw≤10ms, Duty cycle≤1%
+
0.2
−
0.1
Each lead has same dimensions
1.27
+
0.4
−
0.1
0.1
ROHM [ ROHM ]
