RSB6.8S
Diodes
ESD Protection diode
RSB6.8S
!Application
Noise suppression on signal line
!
External dimensions
(Units : mm)
!Features
1) Small surface mounting type. (EMD2)
2) High reliability.
1.2±0.05
1.6±0.1
0.8±0.05
0.6±0.1
F7
0.3±0.05
0.12±0.05
!Construction
Silicon epitaxial planar
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
!Circuit
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Peak pulse power
(tp=10×1000µs)
Power dissipation
Junction temperature
Storage temperature
Operation temperature
Symbol
Ppk
P
Tj
Tstg
Topr
Limits
10
150
150
−55∼+150
−55∼+150
Unit
W
mW
°C
°C
°C
!
Electrical characteristics
(Ta=25°C)
Parameter
Zener voltage
Reverse current
Junction capacitance
Symbol
V
Z
I
R
Ct
Min.
5.780
−
−
Typ.
−
−
30
Max.
7.820
0.5
−
Unit
V
µA
pF
I
Z
=1mA
V
R
=3.5V
V
R
=0V,
F=1MHz
Conditions
∗Zener
voltage (Vz) shall be measured at 40ms after loading current.