RSH070P05
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Min.
Typ.
−
−
−
−
19
25
28
−
4100
510
330
31
35
135
50
34.0
9.5
12
Max.
±10
−
−1
−2.5
27
35
39
−
−
−
−
−
−
−
−
47.6
−
−
−
Gate-source leakage
I
GSS
Drain-source breakdown voltage V
(BR) DSS
−45
I
DSS
Zero gate voltage drain current
−
Gate threshold voltage
V
GS (th)
−1.0
−
Static drain-source on-state
∗
R
DS (on)
−
resistance
−
∗
10.0
Y
fs
Forward transfer admittance
C
iss
−
Input capacitance
C
oss
−
Output capacitance
C
rss
−
Reverse transfer capacitance
t
d (on)
∗
−
Turn-on delay time
∗
t
r
−
Rise time
∗
t
d (off)
−
Turn-off delay time
t
f
∗
−
Fall time
∗
Q
g
−
Total gate charge
∗
Q
gs
−
Gate-source charge
∗
Q
gd
−
Gate-drain charge
∗Pulsed
Data Sheet
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±20V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−45V,
V
GS
=0V
V
DS
=
−10V,
I
D
=
−1mA
I
D
=
−7A,
V
GS
=
−10V
I
D
=
−7A,
V
GS
=
−4.5V
I
D
=
−7A,
V
GS
=
−4.0V
V
DS
=
−10V,
I
D
=
−7A
V
DS
=
−10V
V
GS
=0V
f=1MHz
V
DD
−25
V
I
D
=
−3.5A
V
GS
=
−10V
R
L
=−7Ω
R
G
=10Ω
V
DD
−25V
V
GS
=
−5V
I
D
=
−7A
R
L
=3.5Ω
R
G
=10Ω
Body
diode characteristics
(Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
=
−7A,
V
GS
=0V
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2/4
2009.12 - Rev.A
ROHM [ ROHM ]
