4V Drive Pch MOSFET
RSH070P05
Structure
Silicon P-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Each lead has same dimensions
Dimensions
(Unit : mm)
SOP8
Packaging
specifications
Package
Type
RSH070P05
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
∗2
∗1
Absolute
maximum ratings
(Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Limits
V
DSS
-45
V
GSS
±20
I
D
±7.0
I
DP *1
±28
I
S
-1.6
I
SP *1
-28
P
D *2
2
T
ch
150
T
stg
-55 to +150
Unit
V
V
A
A
A
A
W
o
o
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW10�½�、Duty cycle1
*2 Mounted on a ceramic board
C
C
Thermal
resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R
th(ch-a) *
Limits
62.5
Unit
o
C/W
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1/4
2009.12 - Rev.A
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