RSS090N03
Transistors
Electrical characteristics
(Ta = 25°C)
Parameter
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗Pulsed
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS
(th)
R
DS
(on)
∗
l Y
fs
l
∗
C
iss
C
oss
C
rss
t
d(on)
∗
t
r
∗
t
d(off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Min.
−
30
−
1.0
−
−
−
6.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
11
15
17
−
810
225
160
10
13
46
15
11
2.5
4.5
Max.
10
−
1
2.5
15
22
24
−
−
−
−
−
−
−
−
15
−
−
Unit
µA
V
µA
V
Test Conditions
V
GS
=20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=9A,
V
GS
=10V
I
D
=9A,
V
GS
=4.5V
I
D
=9A,
V
GS
=4V
I
D
=9A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=4.5A,
V
DD
15V
V
GS
=10V
R
L
=3.33Ω
R
GS
=10Ω
V
DD
=15V
V
GS
=5V
I
D
=9A
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body diode characteristics (Source-Drain Characteristics)
(Ta = 25°C)
Parameter
Forward Voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Test Conditions
I
s
=6.4A,
V
GS
=0V
2/3
ROHM [ ROHM ]
