1.2V Drive Pch MOSFET
RZE002P02
Structure
Silicon P-channel MOSFET
Features
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
0.2
0.5 0.5
Dimensions
(Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
0.8
(2)
(1)
1.6
0.2
0.15
Applications
Switching
Package specifications
Package
Type
RZE002P02
Code
Basic ordering unit (pieces)
Taping
TL
3000
1.0
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
Inner circuit
(3)
∗2
(2)
∗1
(1)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Source
(2) Gate
(3) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Souce current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Each terminal mounted on a recommended land
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
−20
±10
±200
±800
−100
−800
150
150
−55
to
+150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
∗
Limits
833
Unit
°C/W
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1/4
2009.06 - Rev.A
0.1Min.
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