ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: rlt@mcb.at
http://www.roithner.mcb.at
383UBC
TECHNICAL DATA
BLUE GaN LED
Technology:
GaN on SiC substrate
Peak Wavelength:
430 nm typ.
Luminous Intensity:
1.25 cd
Package:
5 mm clear plastic
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V
R
Reverse Current
I
R
Soldering Temperature
T
S
Operating Temperature
T
OP
Storage Temperature
T
STG
RATING
5
100
260
-20 .. +80
-30 .. +100
UNIT
V
µA
°C for 5 s
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Luminous Intensity
L
I (430 nm)
I
F
= 20 mA
Optical Output Power
P
O
I
F
= 20 mA
Forward Voltage
V
F
I
F
= 20 mA
Forward Current
I
F
cw
Dutycycle 0.1 @ 10 kHz
Peak Forward Current
I
P
Power Dissipation
P
D
Peak Wavelength
I
F
= 20 mA
λ
P
Spectrum Half Width
I
F
= 20 mA
∆λ
Beam Divergence
I
F
= 20 mA
2θ �½
MIN
800
200
3.9
TYP
1250
250
4.9
20
98
430
65
12
MAX
300
5.5
30
100
UNIT
mcd
µW
V
mA
mA
mW
nm
nm
°