APG2C1-365-E
High Power Single Chip LED
APG2C1-365-E is a InGaN based, high power 365 nm single chip LED in standard emitter package for general
application.
Specifications
•
•
•
•
Structure: InGaN
Peak Wavelength: 365 nm
Optical Output Power: typ. 135 mW
Life Time: > 10.000 hours
Lead free product - RoHS compliant
•
Absolute Maximum Ratings (T
a
=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Symbol
P
D
I
F
I
FP
U
R
T
opr
T
stg
T
sol
Value
1000
500
1000
-5
-30 … +70
-30 … +85
330
Unit
mW
mA
mA
V
°C
°C
°C
Electro-Optical Characteristics (T
a
=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Symbol
I
F
φ
P
O
λ
P
U
F
Δλ
Condition
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
I
F
= 350 mA
Min.
-
-
-
-
-
-
Typ.
350
±
75
135
365
3.8
15
Max.
-
-
-
-
-
-
Unit
mA
deg.
mW
nm
V
nm
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Device Materials
Item
Foundation
Lens
Electrodes
Heat Sink
Material
Plastic
Silicone resin
AgCu
AgCu
13.08.2012
APG2C1-365-E
1/4
ROITHNER [ Roithner LaserTechnik GmbH ]
