APG2C1-385 参数 Datasheet PDF下载

APG2C1-385

High Power Single Chip LED

APG2C1-385 is a InGaN based, high power 385 nm single chip LED in standard emitter package for general

application.

Specifications

•

•

•

•

Structure: InGaN

Peak Wavelength: 385 nm

Optical Output Power: typ. 60 mW

Life Time: > 10.000 hours

Lead free product - RoHS compliant

•

Absolute Maximum Ratings (T

a

=25°C)

Parameter

Power Dissipation, DC

Forward Current, DC

Pulsed Current (1% duty cycle, 1kHz)

Reverse Voltage

Operating Temperature

Storage Temperature

Soldering Temperature (max. 1,5 s)

Symbol

P

D

I

F

I

FP

U

R

T

opr

T

stg

T

sol

Value

1000

500

1000

-5

-30 … +70

-30 … +85

330

Unit

mW

mA

mA

V

°C

°C

°C

Electro-Optical Characteristics (T

a

=25°C)

Parameter

Forward Current

Viewing Angle

CW Output Power

Peak Wavelength

Forward Voltage

Half Width (FWHM)

Symbol

I

F

φ

P

O

λ

P

U

F

Δλ

Condition

I

F

= 350 mA

I

F

= 350 mA

I

F

= 350 mA

I

F

= 350 mA

I

F

= 350 mA

Min.

-

-

-

-

-

-

Typ.

350

±

75

60

385

3.8

18

Max.

-

-

-

-

-

-

Unit

mA

deg.

mW

nm

V

nm

Wavelength measurements tolerance is +/- 2%

Output power measurement tolerance is +/- 10%

Voltage measurement tolerance is +/- 2%

Device Materials

Item

Foundation

Lens

Electrodes

Heat Sink

Material

Plastic

Silicone resin

AgCu

AgCu

13.08.2012

APG2C1-385

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