LDM-0808-1000-93
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
CW Output Power: 1 W
•
Typical 808 nm Emission Wavelength
•
High-efficiency Quantum Well Structure
•
TO5 Package
Applications
•
Solid-state Laser Pumping
•
Medical Usage
•
Target Designator
•
Free-space Optical Communication
PIN CONNECTION
1. Laserdiode cathode
2. Laserdiode anode and photodiode cathode
3. Photodiode anode
Specifications (25°C)
Type
Optical Specification
CW Output Power P
O
Peak Wavelength
Δ
Spectral Width
Δλ
Emitting Area
Wavelength Temperature Coefficient
Beam Divergence
θ
┴
×θ
║
Polarization
Electrical Specification
Slope Efficiency E
S
Threshold Current I
th
Operation Current I
O
Operation Voltage V
f
Series Resistance R
d
Package Style
Absolute Maximum Ratings
Reverse Voltage V
r
Operating Temperature T
O
Storage Temperature T
stg
LDM-0808-1000-93
1
808±10
≤
3.0
100x1
0.3
40x10
TE
≥
1.0
≤
0.25
≤
1.2
≤
2.2
≤
0.5
TO5
2.0
10 … 30
-40 … 85
Unit
W
nm
nm
µm
nm/°C
Deg
W/A
A
A
V
Ω
V
°C
°C
03.08.2010
ldm_0808_1000_93.doc
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ROITHNER [ Roithner LaserTechnik GmbH ]
