RLT1050M-500G 参数 Datasheet PDF下载

RLT1050M-500G

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

•

•

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 1050 nm

Optical Ouput Power: 500 mW

Package: 9 mm

Electrical Connection

Pin Configuration

n-type

PIN

1

2

3

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Bottom View

Absolute Maximum Ratings (T

C

=25°C)

Item

CW Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

Symbol

P

O

V

R(LD)

V

R(PD)

T

C

T

stg

Value

550

1.5

10

-20 … +35

-40 … +70

Unit

mW

V

V

°C

°C

Specifications (T

C

=25°C)

Item

Optical Specification

CW Output Power

Peak Wavelength

Spectral Width (FWHM)

FWHM Beam Divergence

Emitting Aperature

Electrical Specification

Threshold Current

Operating Current

Operating Voltage

Monitor Current

Operating Voltage

Symbol

P

O

λ

P

Δλ

θ

║

θ

┴

WxH

I

th

I

op

U

op

I

m

U

op

Min.

-

-

1.6

-

-

Typ.

500

1050

1.7

10

30

100 x 1

280

890

1.7

500

1.9

Max.

-

-

1.8

-

-

Unit

mW

nm

nm

deg

deg

µm

mA

A

V

µA

V

200

860

-

100

-

350

910

1.8

1500

-

The above specifications are for reference purpose only and subjected to change without prior notice.

25.02.2011

RLT1050M-500G

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