RLT1550-100G
TECHNICAL DATA
Infrared Laser Diode
Structure:
GaInAsP/InP, SQW structure
Lasing wavelength:
typ. 1580 nm, multi mode
Max. optical power:
100 mW
Package:
9 mm (SOT-148)
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST
CONDITION
Optical Output Power
P
o
cw
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 100 mW
Operation Voltage
V
op
P
o
= 100 mW
Lasing Wavelength
λ
p
P
o
= 100 mW
Spectra halfwidth
∆λ
P
o
= 100 mW
(FWHM)
Beam Divergence
Θ
//
P
o
= 100 mW
Beam Divergence
Θ
P
o
= 100 mW
Emitting area
Wxd
MIN
-
300
700
2.3
-
3
8
43
-
TYP
100
400
800
2.4
1580
4
10
45
100x
1
MAX
-
600
1000
2.5
1582
6
12
47
-
UNIT
mW
mA
mA
V
nm
nm
°
°
µm x
µm
04.08.2010
rlt1550_100g.doc
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ROITHNER [ Roithner LaserTechnik GmbH ]
