ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT1550-20G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure:
GaInAsP/InP SQW structure
Lasing wavelength:
1550 nm, single mode
Typ. optical power:
20 mW
Package:
9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Maximum LD Current
I
f
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
200
40
1.5
6
-20 .. +40
-40 .. +85
UNIT
mA
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP
Lasing Aperture
A
cw
1x5
Optical Output Power
P
o
cw
20
Threshold Current
I
th
cw
55
Operation Current
I
op
P
o
= 20 mW
160
Forward Voltage
U
f
P
o
= 20 mW
2
Lasing Wavelength
P
o
= 20 mW
1520 1550
λ
p
Beam Divergence
θ
//
P
o
= 20 mW
25
Beam Divergence
θ
⊥
P
o
= 20 mW
40
Monitor Current
I
m
P
o
= 20 mW
> 20 100
MAX
1580
UNIT
µm²
mW
mA
mA
V
nm
°
°
µA
ROITHNER [ Roithner LaserTechnik GmbH ]
