ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT780-1000G
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure:
multi mode
Lasing wavelength:
typ. 785 nm
Optical power:
1 W
Package:
9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
LASERDIODE
MUST BE COOLED!
NOTE!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
1.2
1.5
10
-20 .. +30
-40 .. +70
UNIT
W
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
P
o
multi mode
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 1 W
Forward Voltage
U
f
P
o
= 1 W
Lasing Wavelength
P
o
= 1 W
λ
p
Spectral Width
FWHM
P
o
= 1 W
∆λ
Beam Divergence
P
o
= 1 W
θ
//
Beam Divergence
P
o
= 1 W
θ
⊥
Monitor Current
I
m
P
o
= 1 W
MIN
TYP
1 x 100
MAX
390
1.2
1.8
780
0.3
100
1
420
1.3
1.9
785
1.0
25
30
500
450
1.4
2.0
790
1.5
1500
UNIT
µm²
W
mA
A
V
nm
nm
°
°
µA
ROITHNER [ Roithner LaserTechnik GmbH ]
