RLT7870MG
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: single transverse mode
Peak Wavelength : typ. 785 nm
Optical Ouput Power: 70 mW
Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Anode
LD Cathode
Bottom View
Absolute Maximum Ratings (T
C
=25°C)
Item
CW Output Power
Pulsed Output Power*
Reverse Voltage
Operating Case Temperature
Storage Temperature
* duty < 50%, pulse width <0.1µs
Symbol
P
O
P
O pulse
U
R
T
C
T
stg
Value
70
100
2
-10 … +60
-40 … +100
Unit
mW
mW
T
C
°C
°C
Specifications (T
C
=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
FWHM Beam Divergence
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Test Conditions
CW, P
O
= 60mW
CW, P
O
= 60mW
CW, P
O
= 60mW
CW
CW, P
O
= 60mW
CW, P
O
= 60mW
CW, P
O
= 60mW
Symbol
P
O
λ
P
θ
║
θ
┴
I
th
I
op
η
U
op
Min.
-
775
7
17
-
-
-
-
Typ.
-
785
9
20
40
95
1.0
1.8
Max.
70
798
11
24
50
140
-
2.2
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
21.12.2011
RLT7870MG
1 of 3
ROITHNER [ Roithner LaserTechnik GmbH ]
