ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT80805MG
Infrared Laserdiode
TECHNICAL DATA
Structure:
GaAlAs double heterostructure
Lasing wavelength:
808 nm typ.
Max. optical power:
5 mW
Package:
5.6 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
LASERDIODE
MUST BE COOLED!
NOTE!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
5
2
30
-10 .. +45
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Optical Output Power
P
o
kink free
5
Threshold Current
I
th
20
25
40
Operation Current
I
op
P
o
= 5 mW
40
50
Operation Voltage
V
op
P
o
= 5 mW
2.5
Lasing Wavelength
P
o
= 5 mW
790 808 810
λ
p
Beam Divergence
P
o
= 5 mW
5
8
11
θ
//
Beam Divergence
P
o
= 5 mW
25
31
37
θ
⊥
Astigmatism
A
s
P
o
= 5 mW, NA=0.4
5
Monitor Current
I
m
P
o
= 5mW, V
r
=5V
10
UNIT
mW
mA
mA
V
nm
°
°
µm
µA
ROITHNER [ Roithner LaserTechnik GmbH ]
