RLT831000G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 830 nm
Optical Ouput Power: 1 W
Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Cathode
LD Anode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T
C
=25°C)
Item
CW Output Power
Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P
O
U
R
T
C
T
stg
Value
1
2
-20 … +30
-40 … +70
Unit
W
V
°C
°C
Specifications (T
C
=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
Wavelength Temperature Coefficient
FWHM Beam Divergence
Emitting Aperature
Polarization
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Series Resistanve
Symbol
P
O
λ
P
Δλ
∂λ
/
∂T
θ
║
θ
┴
WxH
I
th
I
op
η
U
op
R
D
Min.
-
825
-
-
-
-
Typ.
1.5
830
2
0.3
10
40
100 x 1
TE
-
-
-
-
0.8
Max.
-
835
4
-
-
-
Unit
W
nm
nm
nm/°C
deg
deg
µm
mA
A
W/A
V
Ω
-
-
0.8
-
-
400
1.6
-
2.1
-
The above specifications are for reference purpose only and subjected to change without prior notice.
03.08.2010
rlt831000g.doc
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ROITHNER [ Roithner LaserTechnik GmbH ]
