RLT850-100GS 参数 Datasheet PDF下载

RLT850-100GS

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

•

•

•

Lasing Mode Structure: single mode

Peak Wavelength : typ. 852 nm

Optical Output Power: 100 W

Package: 9 mm

Electrical Connection

Pin Configuration

n-type

PIN

1

2

3

Function

LD Anode

LD Cathode, PD Cathode

PD Anode

Bottom View

Absolute Maximum Ratings (T

C

=25°C)

Item

CW Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

Symbol

P

O

V

R(LD)

V

R(PD)

T

C

T

stg

Value

Unit

mW

V

V

°C

°C

-20 … +50

-40 … +80

Specifications (T

C

=25°C)

Item

Optical Specification

CW Output Power

Peak Wavelength

Spectral Width (FWHM)

FWHM Beam Divergence

Emitting Aperature

Lifetime

Electrical Specification

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

Symbol

P

O

λ

P

Δλ

θ

║

θ

┴

WxH

Min.

-

847

-

-

-

100000

I

th

I

op

η

V

op

I

m

-

-

0.9

-

Typ.

100

852

0.5

8

28

5x1

-

20

120

1.0

1.9

Max.

-

857

2

10

30

-

40

170

-

2.2

Unit

mW

nm

nm

deg

deg

µm

hour

mA

mA

W/A

V

mA

The above specifications are for reference purpose only and subjected to change without prior notice.

12.07.2013

RLT850-100GS

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