RLT850-100GS
TECHNICAL DATA
High Power Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: single mode
Peak Wavelength : typ. 852 nm
Optical Output Power: 100 W
Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Anode
LD Cathode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T
C
=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P
O
V
R(LD)
V
R(PD)
T
C
T
stg
Value
Unit
mW
V
V
°C
°C
-20 … +50
-40 … +80
Specifications (T
C
=25°C)
Item
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
FWHM Beam Divergence
Emitting Aperature
Lifetime
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
Symbol
P
O
λ
P
Δλ
θ
║
θ
┴
WxH
Min.
-
847
-
-
-
100000
I
th
I
op
η
V
op
I
m
-
-
0.9
-
Typ.
100
852
0.5
8
28
5x1
-
20
120
1.0
1.9
Max.
-
857
2
10
30
-
40
170
-
2.2
Unit
mW
nm
nm
deg
deg
µm
hour
mA
mA
W/A
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
12.07.2013
RLT850-100GS
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