RLT850M-1WG50
TECHNICAL DATA
Infrared Laser Diode
Specifications
•
•
•
•
•
Structure:
Peak Wavelength:
Optical Output Power:
Package:
Monitor PD:
AlGaAs/InGaAs
AlGaAs/InGaAs
852 nm
1 W, cw
9 mm, flat window
build-in
n-type
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Cathode
LD Anode, PD Cathode (case)
PD Anode
Bottom View
Electro-Optical Characteristics
Item
Optical Specifications
Central Wavelength
Spectral Width (FWHM)
Optical Output Power
Beam Divergence
Emitting Aperture
Mode Structure
Electrical Specifications
Forward Current
Threshold Current
Forward Voltage
Slope Efficiency
Monitor Current
Absolute Maximum Ratings
Lifetime
Operating Case Temperature
Storage Temperature
Soldering Temperature *
* must be completed within 3 seconds
specified at 25°C
Symbol
λ
C
Δλ
P
O
θ║
θ┴
WxH
Min.
847
-
-
-
-
Typ.
852
2
1.0
8
30
1x50
MM
1.09
180
1.9
1.2
-
Max.
857
4
-
11
35
Unit
nm
nm
W
deg.
deg.
µm
I
F
I
TH
V
F
η
I
M
-
-
-
1.0
0.05
10000
-20
-40
-
1.20
220
2.2
-
1.3
A
mA
V
W/A
mA
hour
°C
°C
°C
T
C
T
STG
T
SOL
25
-
-
+50
+85
250
Note:
The above specifications are for reference purpose only and subjected to change without prior notice.
04.12.2012
RLT850M-1WG50
1 of 3
ROITHNER [ Roithner LaserTechnik GmbH ]
