RLT85100MG
Laser Diode Technical Data
ABSOLUTE MAXIMUM RATINGS ( Tc=25
o
C )
DESCRIPTION
SYMBOL
P
o
T
op
T
stg
V
LDR
V
PDR
RATED VALUE
100
-10 to +50
-40 to +85
2
30
Features
•
•
•
•
•
Optical Power (mW)
Operation Temperature (
o
C)
Storage Temperature (
o
C)
LD Reverse Voltage (V)
PD Reverse Voltage (V)
Index Guided MQW Structure
Wavelength : 850 nm (Typ.)
Optical Power : 100 mW CW
Threshold Current : 100 mA ( Typ. )
Package Style : TO-18 (5.6 mmØ)
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25
o
C )
DESCRIPTION
Lasing Wavelength (nm)
Threshold Current (mA)
Operating Current (mA)
Operating Voltage (V)
Monitor Current (mA)
SYMBOL
λ
p
I
th
I
op
V
op
I
m
η
θ
⎪⎢
θ⊥
A
s
MIN.
835
70
200
1.8
0.1
0.5
3
30
*
TYPICAL
850
100
250
2.0
1.0
0.7
5
40
11
MAX.
865
150
350
2.5
2.0
0.9
8
50
*
TEST CONDITION
P
o
=100mW
P
o
=100mW
P
o
=100mW
P
o
=100mW
P
o
=100mW, V
R
=5V
Slope Efficiency (mW/mA)
Beam Divergence
⎪⎢
(°)
Beam Divergence
⊥
(°)
Astigmatism (μm)
***
P
o
=100mW
P
o
=100mW
P
o
=100mW, NA=0.4
03.08.2010
rlt85100mg.doc
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ROITHNER [ Roithner LaserTechnik GmbH ]
