S808200MG
TECHNICAL DATA
Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 808 nm
Optical Ouput Power: 200 mW
Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
1
2
3
Function
LD Cathode
LD Anode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T
C
=20°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P
O
V
r
V
rPD
T
C
T
stg
Value
200
2
30
-10 … +40
-10 … +85
Unit
mW
V
V
°C
°C
Specifications (T
C
=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
Symbol
P
O
λ
C
θ
║
θ
┴
I
th
I
op
η
U
op
I
m
Min.
-
805
-
-
-
-
0.8
-
-
Typ.
200
808
12
40
70
260
1
1.9
0.3
Max.
-
811
-
-
80
280
-
1.95
2
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
23.09.2010
S808200MG
1 of 5
ROITHNER [ Roithner LaserTechnik GmbH ]
