S808200MNP 参数 Datasheet PDF下载

S808200MNP

TECHNICAL DATA

Infrared Laser Diode

Features

•

•

•

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 808 nm

Optical Ouput Power: 200 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

PIN

1

2

3

Function

LD Cathode

LD Anode

Absolute Maximum Ratings (T

C

=20°C)

Item

CW Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

Symbol

P

O

V

r

V

rPD

T

C

T

stg

Value

200

2

30

-10 … +40

-10 … +85

Unit

mW

V

V

°C

°C

Specifications (T

C

=20°C)

Item

Optical Specifications

CW Output Power

Center Wavelength

FWHM Beam Divergence

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Symbol

P

O

λ

C

θ

║

θ

┴

I

th

I

op

η

U

op

Min.

-

805

-

-

-

-

0.8

-

Typ.

200

808

12

40

70

260

1

1.9

Max.

-

811

-

-

80

280

-

1.95

Unit

mW

nm

deg

deg

mA

mA

mW/mA

V

The above specifications are for reference purpose only and subjected to change without prior notice.

06.09.2011

S808200MNP

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