S8410MG
TECHNICAL DATA
Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 840 nm
Optical Ouput Power: 10 mW
Package: 5.6 mm
Electrical Connection
Pin Configuration
Bottom View
PIN
1
2
3
Function
LD Cathode
LD Anode
n.c.
Absolute Maximum Ratings (T
C
=20°C)
Item
CW Output Power
LD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P
O
V
r
T
C
T
stg
Value
10
2
-10 … +60
-15 … +85
Unit
mW
V
°C
°C
Specifications (T
C
=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
FWHM Beam Divergence
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Symbol
P
O
λ
C
θ
║
θ
┴
I
th
I
op
η
U
op
Min.
-
830
-
-
-
-
0.7
-
Typ.
10
840
10
35
17
28
0.95
1.7
Max.
-
850
-
-
23
38
-
2.1
Unit
mW
nm
deg
deg
mA
mA
mW/mA
V
The above specifications are for reference purpose only and subjected to change without prior notice.
04.10.2011
S8410MG
1 of 5