S8550MG 参数 Datasheet PDF下载

S8550MG

TECHNICAL DATA

Infrared Laser Diode

Features

•

•

•

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 850 nm

Optical Ouput Power: 50 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

n-type

PIN

1

2

3

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Bottom View

Absolute Maximum Ratings (T

C

=25°C)

Item

CW Output Power

LD Reverse Voltage

Operating Case Temperature

Storage Temperature

Symbol

P

O

V

rLD

T

C

T

stg

Value

50

2

-10 … +40

-15 … +85

Unit

mW

V

°C

°C

Specifications (T

C

=25°C, P

O

=50mW)

Item

Optical Specifications

Center Wavelength

FWHM Beam Divergence*

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

Symbol

λ

C

θ

║

θ

┴

I

th

I

op

η

U

op

I

m

Min.

830

10

22

-

-

0.4

1.5

0.05

Typ.

850

15

30

28

85

0.75

1.8

0.12

Max.

860

20

38

35

110

-

2.1

1.00

Unit

nm

deg

deg

mA

mA

mW/mA

V

mA

*

θ

║

and

θ

┴

are defined as the angle within the intensity is 50% of the peak value.

The above specifications are for reference purpose only and subjected to change without prior notice.

04.10.2011

S8550MG

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