SSO-AD-500-TO52i
Avalanche Photodiode
Special characteristics:
High gain at low bias voltage
Fast rise time
500 µm diameter active area
low capacitance
Parameters:
active area
Dark current
(M=100)
1)
Total capacitance
(M=100)
Break down voltage U
BR
(at I
D
=2µA)
Temperature coefficient of U
BR
Spectral responsivity
(at 780 nm)
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
"Excess Noise" factor
(M=100)
"Excess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
50 - 60
min 200
1)
Package 1a (TO52i) :
0,196 mm
∅
500 µm
max. 5 nA
typ. 0,5 - 1 nA
typ. 2,5 pF
120 - 190 V
typ. 0,4 %/°C
min. 0,40 A/W
typ. 0,45 A/W
typ. 1,3 GHz
typ. 280 ps
2
typ. 2,2
typ. 0,2
typ. 1 pA/Hz
�½
typ. 2 * 10 W/Hz
-20 ... +70°C
-60 ... +100°C
-14
�½
1)
measurement conditions:
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880 nm, 80 nm bandwith).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
ROITHNER [ Roithner LaserTechnik GmbH ]
