RU120N15
N-Channel Advanced Power MOSFET
Features
Pin Description
·
150V/120A
R
DS
(ON)
=15mΩ(Typ.) @ V
GS
=10V
·
Avalanche Rated
·
Reliable and Rugged
·
Lead Free and Green Devices Available
Applications
TO-220
TO-220F
TO-263
TO-247
·
Automotive applications and a wide
variety of other applications
·
High Efficiency Synchronous in SMPS
·
High Speed Power Switching
Absolute Maximum Ratings
Symbol
Parameter
N-Channel MOSFET
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
150
±25
175
-55 to 175
120
①
②
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
R
θJA
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
400
120
A
100
400
220
0.45
62.5
W
°C/W
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
2000
mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C – JAN., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
