RU140N10
N-Channel Advanced Power MOSFET
Features
•
100V/140A
Pin Description
R
DS
(ON)
=6.5mΩ(Typ.) @ V
GS
=10V
•
Ultra Low On-Resistance
•
Low Gate Charge
•
Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
TO-220
TO-220F
TO-247
TO-263
Applications
·
Switching applications
N-Channel MOSFET
Rating
Unit
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
100
±25
175
-55 to 175
140
①
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
R
θJA
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
560
140
②
①
①
A
100
250
125
0.6
W
62.5
°C/W
Drain-Source Avalanche Ratings
③
Avalanche Energy ,Single Pulsed
E
AS
Storage Temperature Range
1.1
J
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
