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RU1H100S 参数 Datasheet PDF下载

RU1H100S图片预览
型号: RU1H100S
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道先进的功率MOSFET [N-Channel Advanced Power MOSFET]
分类和应用:
文件页数/大小: 11 页 / 449 K
品牌: RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
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RU1H100
N-Channel Advanced Power MOSFET
Features
100V/75A
Pin Description
R
DS
(ON)
=11mΩ(Typ.) @ V
GS
=10V
Ultra Low On-Resistance
Extremely high dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
TO-220
TO-220F
TO-247
TO-263
Applications
·
High Speed Power Switching
·
Uninterruptible Power Supply
Absolute Maximum Ratings
Symbol
Parameter
N-Channel MOSFET
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
100
±25
175
-55 to 175
75
V
°C
°C
A
I
S
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θJC
R
θJA
300µs Pulsed Drain Current Tested
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
300
75
59
A
200
100
0.75
62.5
W
°C/W
Drain-Source Avalanche Ratings
Avalanche Energy ,Single Pulsed
E
AS
Storage Temperature Range
400
mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com