RU1H35S
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
A
=25°C Unless Otherwise Noted)
RU1H35S
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=16A
100
1
10
2
3
4
±100
21
25
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=16A, V
GS
=0V
I
SD
=16A, dl
SD
/dt=100A/µs
0.8
100
430
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 25V,
Frequency=1.0MHz
2.8
2100
250
115
22
76
60
23
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
V
DD
=50V, R
L
=30Ω,
I
DS
=16A, V
GEN
= 10V,
R
G
=4.7Ω
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=80V, V
GS
= 10V,
I
DS
=16A
44
10
21
nC
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by T
Jmax
, I
AS
=21A, V
DD
= 48V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
