RU1H80R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/80A,
R
DS (ON)
=9
mΩ
(Type) @ V
GS
=10V,
I
DS
=40A
•
Ultra Low On-Resistance
•
Exceptional dv/dt capability
•
Fast Switching and Fully Avalanche Rated
•
100% avalanche tested
•
175°C Operating Temperature
• Lead Free and Green Available
Pin Description
TO-220
TO-220F
TO-263
TO-247
Applications
• High Current Switching Applications
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
±25
175
-55 to 175
T
C
=25°C
80
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
320
80
A
A
②
②
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
68
176
88
W
°C/W
0.85
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
600
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
