RU1HC2H
Complementary Advanced Power MOSFET
MOSFET
Features
• N-Channel
100V/3.5A,
R
DS (ON)
=75
mΩ
(Type) @ V
GS
=10V
R
DS (ON)
=80
mΩ
(Type) @ V
GS
=4.5V
• P-Channel
-100V/-2.5A,
R
DS (ON)
=155
mΩ
(Type) @ V
GS
=-10V
R
DS (ON)
=175
mΩ
(Type) @ V
GS
=-4.5V
•
Reliable and Rugged
• ESD Protected
• Lead Free and Green Available
Pin Description
SOP-8
Applications
•
Power Management in Notebook
Computer.
Complementary MOSFET
Absolute Maximum Ratings
Symbol
Parameter
N -Channel
100
±20
150
-55 to 150
3.5
①
P Channel
-100
±20
150
-55 to 150
-2.5
①
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current T
C
=25°C
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested T
C
=25°C
Continuous Drain Current
T
C
=25°C
T
C
=70°C
P
D
R
θJA
②
14
-10
A
A
3.5
2.9
2
1.3
62.5
-2.5
-2
Maximum Power Dissipation
T
C
=25°C
T
C
=70°C
W
°C/W
Thermal Resistance-Junction to Ambient
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
