RU1HP40Q
P-Channel Advanced Power MOSFET
MOSFET
Features
• -100V/-45A,
R
DS (ON)
=25mΩ(tpy.)@V
=-10V
•
Super High Dense Cell Design
•
Ultra Low On-Resistance
•
Reliable and Rugged
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-247
Applications
•
Inverters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
-100
±25
175
-55 to 175
T
C
=25°C
-45
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested
Continuous Drain Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
P
D
R
θJC
③
-180
-45
A
A
②
-36
150
75
1
W
°C/W
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=100°C
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
306
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
